NSN 5961-00-481-5517
Part Details | DIODE SEMICONDUCTOR DEVICE
5961-00-481-5517 A two electrode semiconductor device having an asymmetrical voltage - current characteristic. May or may not include mounting hardware and/or heatsink. Excludes LIGHT EMITTING DIODE and SEMICONDUCTOR DEVICE,PHOTO. For items containing material such as selenium and copper oxide, see RECIFIER, METALLIC.
Alternate Parts: 6191081, 619108-1, PD2750, 3791A, 5961-00-481-5517, 00-481-5517, 5961004815517, 004815517
| Supply Group (FSG) | NSN Assigned | NIIN | Item Name Code (INC) |
|---|---|---|---|
| 59 | FEB 06, 1970 | 00-481-5517 | 20589 ( SEMICONDUCTOR DEVICE, DIODE ) |
REFERENCE DRAWINGS & PICTURES
Cross Reference | NSN 5961-00-481-5517
| Part Number | Cage Code | Manufacturer |
|---|---|---|
| 619108-1 | 37695 | RAYTHEON COMPANYDBA RAYTHEON |
| PD2750 | 01281 | TRW ELECTRONICS AND DEFENSE SECTORRF DEVICES |
| 3791A | 05277 | WESTINGHOUSE ELECTRIC CORPSEMICONDUCTOR DIV |
Technical Data | NSN 5961-00-481-5517
| Characteristic | Specifications |
|---|---|
| SEMICONDUCTOR MATERIAL | SILICON |
| VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | 50.0 MAXIMUM REVERSE VOLTAGE, PEAK |
| CURRENT RATING PER CHARACTERISTIC | CL10.00 MILLIAMPERES MAXIMUM |
| POWER RATING PER CHARACTERISTIC | AB2.5 WATTS MAXIMUM |
| MAXIMUM OPERATING TEMP PER MEASUREMENT POINT | 175.0 DEG CELSIUS JUNCTION |
| INCLOSURE MATERIAL | GLASS AND METAL |
| MOUNTING METHOD | PRESS FIT |
| TERMINAL TYPE AND QUANTITY | 2 UNINSULATED WIRE LEAD |
| OVERALL LENGTH | 0.190 INCHES MAXIMUM |
| OVERALL DIAMETER | 0.650 INCHES MAXIMUM |
| FEATURES PROVIDED | HERMETICALLY SEALED CASE |
| END ITEM IDENTIFICATION | AN/AQA-7(V) |
