NSN 5961-00-482-6277
Part Details | TRANSISTOR
5961-00-482-6277 An active semiconductor device with three or more electrodes. May or may not include mounting hardware and/or heatsink. Excludes SEMICONDUCTOR DEVICE, DIODE and SEMICONDUCTOR DEVICE, THYRISTOR. For solid state devices which are responsive to visible or infrared radiant energy, see SEMICONDUCTOR DEVICE, PHOTO.
Alternate Parts: 2N4403, 05A04403, 531333001, 531333-001, 531333001, 531333-001, 033300, 5961-00-482-6277, 00-482-6277, 5961004826277, 004826277
Supply Group (FSG) | NSN Assigned | NIIN | Item Name Code (INC) |
---|---|---|---|
59 | FEB 01, 1971 | 00-482-6277 | 20588 ( TRANSISTOR ) |
REFERENCE DRAWINGS & PICTURES
Cross Reference | NSN 5961-00-482-6277
Part Number | Cage Code | Manufacturer |
---|---|---|
2N4403 | 04713 | FREESCALE SEMICONDUCTOR, INC. |
05A04403 | 50319 | HEKIMIAN LABORATORIES INCCUSTOMER SUPPORT DEPT |
531333-001 | 49956 | RAYTHEON COMPANYDBA RAYTHEON |
531333-001 | 3B150 | RAYTHEON COMPANYDBA RAYTHEON |
033300 | 89305 | SIMMONDS PRECISION PRODUCTS INC |
Technical Data | NSN 5961-00-482-6277
Characteristic | Specifications |
---|---|
SEMICONDUCTOR MATERIAL | SILICON |
INTERNAL CONFIGURATION | JUNCTION CONTACT |
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | 40.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-BASE, EMITTER OPEN AND 40.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-EMITTER, BASE OPEN AND 5.0 MAXIMUM BREAKDOWN VOLTAGE, EMITTER-TO-BASE, COLLECTOR OPEN |
CURRENT RATING PER CHARACTERISTIC | AC600.00 MILLIAMPERES MAXIMUM |
POWER RATING PER CHARACTERISTIC | AB350.0 MILLIWATTS MAXIMUM |
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT | 165.0 DEG CELSIUS JUNCTION |
INCLOSURE MATERIAL | PLASTIC |
MOUNTING METHOD | TERMINAL |
TERMINAL TYPE AND QUANTITY | 3 UNINSULATED WIRE LEAD |
OVERALL LENGTH | 0.188 INCHES NOMINAL |
OVERALL DIAMETER | 0.188 INCHES NOMINAL |
OVERALL WIDTH ACROSS FLATS | 0.141 INCHES NOMINAL |
FEATURES PROVIDED | HERMETICALLY SEALED CASE |
SPECIAL FEATURES | JUNCTION PATTERN ARRANGEMENT: PNP |