NSN 5961-00-483-4189
Part Details | TRANSISTOR
5961-00-483-4189 An active semiconductor device with three or more electrodes. May or may not include mounting hardware and/or heatsink. Excludes SEMICONDUCTOR DEVICE, DIODE and SEMICONDUCTOR DEVICE, THYRISTOR. For solid state devices which are responsive to visible or infrared radiant energy, see SEMICONDUCTOR DEVICE, PHOTO.
Alternate Parts: 2N5321TINLEAD, 2N5321TIN/LEAD, 204025, 2005321, 200-5321, 2N5321, RELEASE5779, 2N5321, 2N5321, 120440007, 12044-0007, 120010150, 12001-0150, 2N5321, 2N5321, 2N5321, S59308, S59-308, 2N5321, 2N5321, 2N5321, 35469002, 35469-002, SMC869488, SM-C-869488, 5961-00-483-4189, 00-483-4189, 5961004834189, 004834189
Supply Group (FSG) | NSN Assigned | NIIN | Item Name Code (INC) |
---|---|---|---|
59 | FEB 10, 1971 | 00-483-4189 | 20588 ( TRANSISTOR ) |
REFERENCE DRAWINGS & PICTURES
Cross Reference | NSN 5961-00-483-4189
Part Number | Cage Code | Manufacturer |
---|---|---|
2N5321TIN/LEAD | 55464 | CENTRAL SEMICONDUCTOR CORP. |
204025 | 32274 | CIPHER DATA PRODUCTS INCOEM MARKETING DIV |
200-5321 | 32097 | DDC PERTEC PERIPHERALS CORP |
2N5321 | 80131 | ELECTRONIC INDUSTRIES ASSOCIATION |
RELEASE5779 | 80131 | ELECTRONIC INDUSTRIES ASSOCIATION |
2N5321 | 07263 | FAIRCHILD SEMICONDUCTOR CORP |
2N5321 | 04713 | FREESCALE SEMICONDUCTOR, INC. |
12044-0007 | 27914 | HONEYWELL INTERNATIONAL INCDBA HONEYWELL |
12001-0150 | 27914 | HONEYWELL INTERNATIONAL INCDBA HONEYWELL |
2N5321 | 1MY79 | INTERSIL COMMUNICATIONS INC. |
2N5321 | 34371 | INTERSIL CORPORATIONDIV NA |
2N5321 | 43611 | MICROSEMI CORP.- MASSACHUSETTSDBA MICROSEMI-LAWRENCE |
S59-308 | 54418 | MILTOPE CORPORATION |
2N5321 | 49956 | RAYTHEON COMPANYDBA RAYTHEON |
2N5321 | 54590 | RCA CORPDISTRIBUTION AND SPECIAL PRODUCTS |
2N5321 | 50891 | SEMICONDUCTOR TECHNOLOGY INCDBA S T I |
35469-002 | 28856 | TELEX COMMUNICATIONS INCSUB OF TELEX CORP |
SM-C-869488 | 80063 | US ARMY COMMUNICATIONS &ELECTRONICS MATERIEL READINESS |
Technical Data | NSN 5961-00-483-4189
Characteristic | Specifications |
---|---|
SEMICONDUCTOR MATERIAL | SILICON |
INTERNAL CONFIGURATION | JUNCTION CONTACT |
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | 75.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-BASE, EMITTER OPEN AND 50.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-EMITTER, BASE OPEN AND 5.0 MAXIMUM BREAKDOWN VOLTAGE, EMITTER-TO-BASE, COLLECTOR OPEN |
CURRENT RATING PER CHARACTERISTIC | AB1.00 AMPERES MAXIMUM AND AC2.00 AMPERES MAXIMUM |
POWER RATING PER CHARACTERISTIC | AB10.0 WATTS MAXIMUM |
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT | 200.0 DEG CELSIUS JUNCTION |
INCLOSURE MATERIAL | METAL |
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE | COLLECTOR |
MOUNTING METHOD | TERMINAL |
TERMINAL LENGTH | 1.500 INCHES MINIMUM |
TERMINAL CIRCLE DIAMETER | 0.200 INCHES NOMINAL |
TERMINAL TYPE AND QUANTITY | 3 UNINSULATED WIRE LEAD |
OVERALL LENGTH | 0.260 INCHES MAXIMUM |
OVERALL DIAMETER | 0.370 INCHES MAXIMUM |
FEATURES PROVIDED | HERMETICALLY SEALED CASE |
SPECIAL FEATURES | JUNCTION PATTERN ARRANGEMENT: NPN |
SPECIFICATION/STANDARD DATA | 80131-RELESE5779 PROFESSIONAL/INDUSTRIAL ASSOCIATION SPECIFICATION |