NSN 5961-00-483-4526
Part Details | DIODE SEMICONDUCTOR DEVICE
5961-00-483-4526 A two electrode semiconductor device having an asymmetrical voltage - current characteristic. May or may not include mounting hardware and/or heatsink. Excludes LIGHT EMITTING DIODE and SEMICONDUCTOR DEVICE,PHOTO. For items containing material such as selenium and copper oxide, see RECIFIER, METALLIC.
Alternate Parts: W41292F6200F1, UTX210, 6186691, 618669-1, 6186691, 618669-1, 5921207, 5961-00-483-4526, 00-483-4526, 5961004834526, 004834526
| Supply Group (FSG) | NSN Assigned | NIIN | Item Name Code (INC) |
|---|---|---|---|
| 59 | FEB 10, 1971 | 00-483-4526 | 20589 ( SEMICONDUCTOR DEVICE, DIODE ) |
REFERENCE DRAWINGS & PICTURES
Cross Reference | NSN 5961-00-483-4526
| Part Number | Cage Code | Manufacturer |
|---|---|---|
| W41292F6200F1 | C0426 | HENSOLDT SENSORS GMBH |
| UTX210 | 12969 | MICRO USPD INC |
| 618669-1 | 37695 | RAYTHEON COMPANYDBA RAYTHEON |
| 618669-1 | 30043 | SOLID STATE DEVICES, INC. |
| 5921207 | S0522 | TADIRAN LTD |
Technical Data | NSN 5961-00-483-4526
| Characteristic | Specifications |
|---|---|
| SEMICONDUCTOR MATERIAL | SILICON |
| VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | 100.0 MAXIMUM REVERSE VOLTAGE, PEAK |
| CURRENT RATING PER CHARACTERISTIC | EB10.00 MILLIAMPERES MAXIMUM |
| MAXIMUM OPERATING TEMP PER MEASUREMENT POINT | 175.0 DEG CELSIUS AMBIENT AIR |
| INCLOSURE MATERIAL | GLASS |
| MOUNTING METHOD | TERMINAL |
| TERMINAL TYPE AND QUANTITY | 2 UNINSULATED WIRE LEAD |
| OVERALL LENGTH | 0.250 INCHES MAXIMUM |
| OVERALL DIAMETER | 0.055 INCHES NOMINAL |
| FEATURES PROVIDED | HERMETICALLY SEALED CASE |
