NSN 5961-00-483-6600
Part Details | DIODE SEMICONDUCTOR DEVICE
5961-00-483-6600 A two electrode semiconductor device having an asymmetrical voltage - current characteristic. May or may not include mounting hardware and/or heatsink. Excludes LIGHT EMITTING DIODE and SEMICONDUCTOR DEVICE,PHOTO. For items containing material such as selenium and copper oxide, see RECIFIER, METALLIC.
Alternate Parts: 19020551, 1902-0551, SZ1121380, SZ11213-80, 19020551, 1902-0551, 19020551, 1902-0551, DZ720508F, SZ1121380, SZ11213-80, 5258815, 5258-815, 5961-00-483-6600, 00-483-6600, 5961004836600, 004836600
| Supply Group (FSG) | NSN Assigned | NIIN | Item Name Code (INC) |
|---|---|---|---|
| 59 | MAY 16, 1969 | 00-483-6600 | 20589 ( SEMICONDUCTOR DEVICE, DIODE ) |
REFERENCE DRAWINGS & PICTURES
Cross Reference | NSN 5961-00-483-6600
| Part Number | Cage Code | Manufacturer |
|---|---|---|
| 1902-0551 | 50434 | AVAGO TECHNOLOGIES U.S. INC.DBA AVAGO TECHNOLOGIES |
| SZ11213-80 | 04713 | FREESCALE SEMICONDUCTOR, INC. |
| 1902-0551 | 28480 | HEWLETT-PACKARD COMPANYDBA HP |
| 1902-0551 | 12954 | MICROSEMI CORP.-SCOTTSDALEDBA MICROSEMI |
| DZ720508F | 12954 | MICROSEMI CORP.-SCOTTSDALEDBA MICROSEMI |
| SZ11213-80 | 5V1P1 | ON SEMICONDUCTOR CORPORATION |
| 5258-815 | 05869 | RAYTHEON COMPANYDBA RAYTHEON |
Technical Data | NSN 5961-00-483-6600
| Characteristic | Specifications |
|---|---|
| SEMICONDUCTOR MATERIAL | SILICON |
| VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | 6.2 MAXIMUM NOMINAL REGULATOR VOLTAGE |
| CURRENT RATING PER CHARACTERISTIC | EB40.00 MILLIAMPERES MAXIMUM |
| POWER RATING PER CHARACTERISTIC | AG1.0 WATTS MAXIMUM |
| INCLOSURE MATERIAL | GLASS AND METAL |
| MOUNTING METHOD | TERMINAL |
| TERMINAL LENGTH | 1.000 INCHES MINIMUM |
| TERMINAL TYPE AND QUANTITY | 2 UNINSULATED WIRE LEAD |
| OVERALL LENGTH | 0.265 INCHES NOMINAL |
| OVERALL DIAMETER | 0.131 INCHES NOMINAL |
| FEATURES PROVIDED | HERMETICALLY SEALED CASE |
