NSN 5961-00-489-1150
Part Details | TRANSISTOR
5961-00-489-1150 An active semiconductor device with three or more electrodes. May or may not include mounting hardware and/or heatsink. Excludes SEMICONDUCTOR DEVICE, DIODE and SEMICONDUCTOR DEVICE, THYRISTOR. For solid state devices which are responsive to visible or infrared radiant energy, see SEMICONDUCTOR DEVICE, PHOTO.
Alternate Parts: 2N5629, 2N5629A, 2N5629, RELEASE5926, 2N5629, 2N5629, 2N5629, 2N5629, 2N5629, 2N5629, 2N5629, 2N5629, 3011615, 2N5629, 2N5629, 2N5629, 2N5629, 2N5629, 5961-00-489-1150, 00-489-1150, 5961004891150, 004891150
Supply Group (FSG) | NSN Assigned | NIIN | Item Name Code (INC) |
---|---|---|---|
59 | MAR 18, 1972 | 00-489-1150 | 20588 ( TRANSISTOR ) |
REFERENCE DRAWINGS & PICTURES
Cross Reference | NSN 5961-00-489-1150
Part Number | Cage Code | Manufacturer |
---|---|---|
2N5629 | C7191 | ADELCO ELEKTRONIK GMBH |
2N5629A | C7191 | ADELCO ELEKTRONIK GMBH |
2N5629 | 52333 | API ELECTRONICS, INC.DBA API TECHNOLOGIES CORP |
RELEASE5926 | 80131 | ELECTRONIC INDUSTRIES ASSOCIATION |
2N5629 | 80131 | ELECTRONIC INDUSTRIES ASSOCIATION |
2N5629 | 34156 | FALKOR PARTNERS, LLCDBA SEMICOA |
2N5629 | 04713 | FREESCALE SEMICONDUCTOR, INC. |
2N5629 | 03877 | GILBERT ENGINEERING CO INC/INCONSUB OF TRANSITRON ELECTRONIC CORP |
2N5629 | 1MY79 | INTERSIL COMMUNICATIONS INC. |
2N5629 | 34371 | INTERSIL CORPORATIONDIV NA |
2N5629 | 33178 | MICROSEMI PPC INC |
2N5629 | 81349 | MILITARY SPECIFICATIONSPROMULGATED BY MILITARY |
3011615 | 10001 | NAVAIR AND NAVSEA MANAGEDORIGINAL DESIGN ACTIVITY DWG NOT |
2N5629 | 31338 | SEMITRONICS CORP |
2N5629 | 07256 | SILICON TRANSISTOR CORPSUB OF BBF INC |
2N5629 | 30045 | SOLID POWER CORP |
2N5629 | 30043 | SOLID STATE DEVICES, INC. |
2N5629 | 01281 | TRW ELECTRONICS AND DEFENSE SECTORRF DEVICES |
Technical Data | NSN 5961-00-489-1150
Characteristic | Specifications |
---|---|
SEMICONDUCTOR MATERIAL | SILICON |
INTERNAL CONFIGURATION | JUNCTION CONTACT |
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | 100.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-BASE, EMITTER OPEN AND 100.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-EMITTER, BASE OPEN AND 7.0 MAXIMUM BREAKDOWN VOLTAGE, EMITTER-TO-BASE, COLLECTOR OPEN |
CURRENT RATING PER CHARACTERISTIC | AB5.00 AMPERES MAXIMUM AND AC16.00 AMPERES MAXIMUM |
POWER RATING PER CHARACTERISTIC | AB200.0 WATTS MAXIMUM |
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT | 200.0 DEG CELSIUS JUNCTION |
INCLOSURE MATERIAL | METAL |
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE | COLLECTOR |
MOUNTING METHOD | UNTHREADED HOLE |
MOUNTING FACILITY QUANTITY | 2 |
TERMINAL TYPE AND QUANTITY | 2 UNINSULATED WIRE LEAD AND 1 CASE |
OVERALL LENGTH | 0.450 INCHES MAXIMUM |
OVERALL DIAMETER | 0.875 INCHES MAXIMUM |
FEATURES PROVIDED | HERMETICALLY SEALED CASE |
SPECIAL FEATURES | JUNCTION PATTERN ARRANGEMENT: NPN |
SPECIFICATION/STANDARD DATA | 80131-RELESE5926 PROFESSIONAL/INDUSTRIAL ASSOCIATION SPECIFICATION |