NSN 5961-00-490-4260
Part Details | TRANSISTOR
5961-00-490-4260 An active semiconductor device with three or more electrodes. May or may not include mounting hardware and/or heatsink. Excludes SEMICONDUCTOR DEVICE, DIODE and SEMICONDUCTOR DEVICE, THYRISTOR. For solid state devices which are responsive to visible or infrared radiant energy, see SEMICONDUCTOR DEVICE, PHOTO.
Alternate Parts: 62660, 125AS251, 5961-00-490-4260, 00-490-4260, 5961004904260, 004904260
| Supply Group (FSG) | NSN Assigned | NIIN | Item Name Code (INC) |
|---|---|---|---|
| 59 | MAR 18, 1972 | 00-490-4260 | 20588 ( TRANSISTOR ) |
REFERENCE DRAWINGS & PICTURES
Cross Reference | NSN 5961-00-490-4260
| Part Number | Cage Code | Manufacturer |
|---|---|---|
| 62660 | 34371 | INTERSIL CORPORATIONDIV NA |
| 125AS251 | 30003 | NAVAL AIR SYSTEMS COMMAND MANAGEDORIGINAL DESIGN ACTIVITY NOT |
Technical Data | NSN 5961-00-490-4260
| Characteristic | Specifications |
|---|---|
| SEMICONDUCTOR MATERIAL | SILICON |
| INTERNAL CONFIGURATION | JUNCTION CONTACT |
| VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | 160.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-BASE, EMITTER OPEN AND 140.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-EMITTER, BASE OPEN AND 7.0 MAXIMUM BREAKDOWN VOLTAGE, EMITTER-TO-BASE, COLLECTOR OPEN |
| CURRENT RATING PER CHARACTERISTIC | AB2.00 AMPERES MAXIMUM AND AC3.00 AMPERES MAXIMUM |
| POWER RATING PER CHARACTERISTIC | AF25.0 WATTS MAXIMUM |
| INCLOSURE MATERIAL | METAL |
| ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE | COLLECTOR |
| MOUNTING METHOD | UNTHREADED HOLE |
| MOUNTING FACILITY QUANTITY | 2 |
| TERMINAL TYPE AND QUANTITY | 2 UNINSULATED WIRE LEAD AND 1 CASE |
| OVERALL LENGTH | 0.340 INCHES MAXIMUM |
| OVERALL DIAMETER | 0.500 INCHES MAXIMUM |
| FEATURES PROVIDED | HERMETICALLY SEALED CASE |
| SPECIAL FEATURES | JUNCTION PATTERN ARRANGEMENT: NPN |
