NSN 5961-00-491-4371
Part Details | TRANSISTOR
5961-00-491-4371 An active semiconductor device with three or more electrodes. May or may not include mounting hardware and/or heatsink. Excludes SEMICONDUCTOR DEVICE, DIODE and SEMICONDUCTOR DEVICE, THYRISTOR. For solid state devices which are responsive to visible or infrared radiant energy, see SEMICONDUCTOR DEVICE, PHOTO.
Alternate Parts: 2N2283, 2561197, 2N2283, 5961-00-491-4371, 00-491-4371, 5961004914371, 004914371
| Supply Group (FSG) | NSN Assigned | NIIN | Item Name Code (INC) |
|---|---|---|---|
| 59 | JUN 11, 1969 | 00-491-4371 | 20588 ( TRANSISTOR ) |
REFERENCE DRAWINGS & PICTURES
Cross Reference | NSN 5961-00-491-4371
| Part Number | Cage Code | Manufacturer |
|---|---|---|
| 2N2283 | 53399 | GPD OPTOELECTRONICS CORP.DIV GPD OPTOELECTRONICS |
| 2561197 | 10001 | NAVAIR AND NAVSEA MANAGEDORIGINAL DESIGN ACTIVITY DWG NOT |
| 2N2283 | 21845 | SOLITRON DEVICES, INC. |
Technical Data | NSN 5961-00-491-4371
| Characteristic | Specifications |
|---|---|
| SEMICONDUCTOR MATERIAL | GERMANIUM |
| INTERNAL CONFIGURATION | JUNCTION CONTACT |
| VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | 100.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-BASE, EMITTER OPEN AND 60.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-EMITTER, BASE OPEN AND 1.5 MAXIMUM BREAKDOWN VOLTAGE, EMITTER-TO-BASE, COLLECTOR OPEN |
| CURRENT RATING PER CHARACTERISTIC | AB1.00 AMPERES MAXIMUM AND AC3.00 AMPERES MAXIMUM |
| POWER RATING PER CHARACTERISTIC | AB66.0 MILLIWATTS MAXIMUM |
| MAXIMUM OPERATING TEMP PER MEASUREMENT POINT | 165.0 DEG CELSIUS CASE |
| INCLOSURE MATERIAL | METAL |
| ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE | COLLECTOR |
| MOUNTING METHOD | UNTHREADED HOLE |
| MOUNTING FACILITY QUANTITY | 2 |
| TERMINAL TYPE AND QUANTITY | 3 UNINSULATED WIRE LEAD |
| OVERALL LENGTH | 0.260 INCHES MAXIMUM |
| OVERALL DIAMETER | 0.320 INCHES MAXIMUM |
| FEATURES PROVIDED | HERMETICALLY SEALED CASE |
| SPECIAL FEATURES | JUNCTION PATTERN ARRANGEMENT: PNP |
