NSN 5962-01-074-1670

Part Details | LINEAR MICROCIRCUIT

5962-01-074-1670 A microcircuit whose output is a function of the input; that is, the output varies in a predetermined and essentially predictable manner from the input signal.

Alternate Parts: SC90210, SC/90210, SCA490210, SC/A4/90210, LF157H, 7849527P001, LF357AH, LF257H, LF157H, LF157A4883B, LF157A4/883B, LF157AHMIL, LF157AH/MIL, LF257H, 8080526, 808052-6, BO3009352, 3009352, 27030700190, 5962-01-074-1670, 01-074-1670, 5962010741670, 010741670

Supply Group (FSG) NSN Assigned NIIN Item Name Code (INC)
59MAR 27, 197901-074-167031778 ( MICROCIRCUIT, LINEAR )
REFERENCE DRAWINGS & PICTURES
Cross Reference | NSN 5962-01-074-1670
Part Number Cage Code Manufacturer
SC/90210K4208CHEMRING ENERGETICS UK LIMITED
SC/A4/90210K4208CHEMRING ENERGETICS UK LIMITED
LF157H32293INTERSIL INCSUB OF GENERAL ELECTRIC CO
7849527P00103538LOCKHEED MARTIN CORPORATIONDIV RMS
LF357AH27014NATIONAL SEMICONDUCTOR CORPORATION
LF257H27014NATIONAL SEMICONDUCTOR CORPORATION
LF157H27014NATIONAL SEMICONDUCTOR CORPORATION
LF157A4/883B27014NATIONAL SEMICONDUCTOR CORPORATION
LF157AH/MIL27014NATIONAL SEMICONDUCTOR CORPORATION
LF257HD2540PHILIPSSEMICONDUCTORSUNTERNEHMENSBEREICH
808052-696214RAYTHEON COMPANYDBA RAYTHEON
BO3009352D0894ROHDE & SCHWARZ GMBH & CO. KG
3009352D0894ROHDE & SCHWARZ GMBH & CO. KG
270307001900124BSAPA OPERACIONES SL
Technical Data | NSN 5962-01-074-1670
Characteristic Specifications
DESIGN FUNCTION AND QUANTITY1 AMPLIFIER, OPERATIONAL, GENERAL PURPOSE
INPUT CIRCUIT PATTERN 2 INPUT
OPERATING TEMP RANGE-55.0 TO +125.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT TIN
INCLOSURE CONFIGURATION CAN
INCLOSURE MATERIAL GLASS AND METAL
CASE OUTLINE SOURCE AND DESIGNATORT0-99 JOINT ELECTRON DEVICE ENGINEERING COUNCIL
BODY OUTSIDE DIAMETER0.335 INCHES MINIMUM AND 0.370 INCHES MAXIMUM
BODY HEIGHT0.165 INCHES MINIMUM AND 0.185 INCHES MAXIMUM
MAXIMUM POWER DISSIPATION RATING670.0 MILLIWATTS
STORAGE TEMP RANGE-65.0 TO +150.0 DEG CELSIUS
FEATURES PROVIDED MONOLITHIC AND HIGH VOLTAGE AND W/FIELD EFFECT TRANSISTOR SWITCH AND INTERNALLY COMPENSATED